Features

● UltraFast: Optimized for high operating up to

80 kHz in hard switching, >200 kHz in

resonant mode

● Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

● IGBT co-packaged with HEXFRED® ultrafast,

ultra-soft recovery anti-parallel diodes for use in bridge

configurations

● Industry standard TO-220 Full-Pak

● Lead-Free

Benefits

● Generation 4 IGBTs offer highest efficiencies available

● IGBTs optimized for specifica application conditions

● HEXFRED® diodes optimized for performace with IGBTs

Minimized recovery characteristics require less/no

snubbing