INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

•Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short

Circuit Rated to 10µs @ 125°C, VGE= 15V

•Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

previous generation

•IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

•Industry standard TO-220AB package

Benefits

•Latest generation 4 IGBTs offer highest power density motor controls possible

•HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

•This part replaces the IRGBC20KD2 and IRGBC20MD2 products

•For hints see design tip 97003