位置:IRF7807VD2PBF > IRF7807VD2PBF详情

IRF7807VD2PbF中文资料

厂家型号

IRF7807VD2PbF

文件大小

143.63Kbytes

页面数量

9

功能描述

Co-Pack N-channel HEXFET짰 Power MOSFET and Schottky Diode

MOSFET 30V FETKY 30 VBRD 25mOhms 9.5nC

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

IRF7807VD2PbF数据手册规格书PDF详情

Description

The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.

• Co-Pack N-channel HEXFET® Power MOSFET

and Schottky Diode

• Ideal for Synchronous Rectifiers in DC-DC

Converters Up to 5A Output

• Low Conduction Losses

• Low Switching Losses

• Low Vf Schottky Rectifier

• Lead-Free

IRF7807VD2PBF产品属性

  • 类型

    描述

  • 型号

    IRF7807VD2PBF

  • 功能描述

    MOSFET 30V FETKY 30 VBRD 25mOhms 9.5nC

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-6 16:20:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IRF7807VD2PBF
3596
3596
Infineon Technologies
23+
8SOIC
9000
原装正品,支持实单
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
IR
23+
8000
专注配单,只做原装进口现货
IR
23+
7000
IR
2450+
SOP-8
9850
只做原厂原装正品现货或订货假一赔十!
IR
17+
SOP8
6200
100%原装正品现货
International Rectifier
2022+
1
全新原装 货期两周
INFINEON
25+
SOP-8
3000
就找我吧!--邀您体验愉快问购元件!
IR
1923+
SOP8
5000
正品原装品质假一赔十