Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only

moderately between +25°C and +150°C. The diode used in parallel with the IGBT is an ultrafast (tRR

Features

• 20A, 500V

• Latch Free Operation

• Typical Fall Time < 500ns

• High Input Impedance

• Low Conduction Loss

• With Anti-Parallel Diode

•tRR