Description

The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150°C.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

The diode used in anti-Parallel with the IGBT is the same as the RHRP15120. The IGBT was formerly development type TA49145.

Features

• 35A, 1200V at TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time at TJ = 150°C . . . . . . . . . . . . . . 350ns

• Short Circuit Rating

• Low Conduction Loss