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IXTT16P60P价格
参考价格：￥35.1012
型号：IXTT16P60P 品牌：IXYS 备注：这里有IXTT16P60P多少钱，2025年最近7天走势，今日出价，今日竞价，IXTT16P60P批发/采购报价，IXTT16P60P行情走势销售排行榜，IXTT16P60P报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTT16P60P | Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode 文件：137.84 Kbytes Page：5 Pages | IXYS |   | |
20.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers Features ◆ Low forward voltage drop ◆ ThinkiSemi mesa technology with high efficiency ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,Motor Control,SMPS and UPS ◆ Car Audi | THINKISEMI 思祁半导体 | | ||
20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers 文件：985.24 Kbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
P-Channel Enhancement Mode MOSFET 文件：239.79 Kbytes Page：4 Pages | DACO | | ||
P-Channel Enhancement Mode MOSFET 文件：258.86 Kbytes Page：4 Pages | DACO | | ||
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode 文件：137.84 Kbytes Page：5 Pages | IXYS | |
IXTT16P60P产品属性
- 类型
描述
- 型号
IXTT16P60P
- 功能描述
MOSFET -16.0 Amps -600V 0.720 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
22+ |
TO2683 D3Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
xilinx |
22+ |
TO-268 |
6800 |
||||
IXYS/艾赛斯 |
22+ |
TO-268 |
25000 |
只做原装进口现货,专注配单 |
|||
IXYS |
23+ |
N/A |
10065 |
原装正品,有挂有货,假一赔十 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
24+ |
N/A |
78000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IXYS(艾赛斯) |
2405+ |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
Littelfuse/IXYS |
24+ |
TO268 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IXYS |
24+ |
TO-268 |
60 |
IXTT16P60P规格书下载地址
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DdatasheetPDF页码索引
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