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IXTT11P50价格
参考价格：￥32.8898
型号：IXTT11P50 品牌：IXYS 备注：这里有IXTT11P50多少钱，2025年最近7天走势，今日出价，今日竞价，IXTT11P50批发/采购报价，IXTT11P50行情走势销售排行榜，IXTT11P50报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTT11P50 | Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan | IXYS |   | |
IXTT11P50 | Standard Power MOSFET Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan | IXYS | | |
Standard Power MOSFET Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan | IXYS | | ||
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan | IXYS | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Features · High voltage p-channel power mosfet; complements MSAFX24N50A · Ultrafast body diode · Rugged polysilicon gate cell structure · Increased Unclamped Inductive Switching (UIS) capability · Hermetically sealed, surface mount power package · Low package inductance · Very | Microsemi 美高森美 | |
IXTT11P50产品属性
- 类型
描述
- 型号
IXTT11P50
- 功能描述
MOSFET 11 Amps 500V 0.75 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
TO-TO-220 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS |
23+ |
TO-268 |
8000 |
只做原装现货 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS/艾赛斯 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IXYS |
22+ |
TO2683 D3Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
Littelfuse/IXYS |
24+ |
TO-268 |
8075 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IXYS/艾赛斯 |
21+ |
TO-268 |
10000 |
原装现货假一罚十 |
|||
IXYS |
24+ |
TO-268 |
8866 |
||||
xilinx |
22+ |
TO-268 |
6800 |
IXTT11P50规格书下载地址
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2018-12-28
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