位置：首页 > IC中文资料第4745页 > IXTT10P50
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTT10P50 | Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan | IXYS 艾赛斯 |   | |
IXTT10P50 | MOSFET P-CH 500V 10A TO-268 | Littelfuse 力特 | | |
PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated PolarP™ Power MOSFETs P-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Avalanche Rated • Rugged PolarPTM Process • Low Package Inductance • Fast Intrinsic Diode Advantages • Easy to Mount • Space Savings • High Power Density Applications • High- | IXYS 艾赛斯 | | ||
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan | IXYS 艾赛斯 | | ||
PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated PolarP™ Power MOSFETs P-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Avalanche Rated • Rugged PolarPTM Process • Low Package Inductance • Fast Intrinsic Diode Advantages • Easy to Mount • Space Savings • High Power Density Applications • High- | IXYS 艾赛斯 | | ||
P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -10A@ TC=25℃ · Drain Source Voltage -VDSS= -500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1Ω(Max)@VGS= -10V APPLICATIONS · Push Pull Amplifiers · High- Side Switches · DC Choppers · Automatic Test Equipment | ISC 无锡固电 | | ||
High Voltage Power Supplies 文件：109.45 Kbytes Page：2 Pages | TDK 东电化 | |
IXTT10P50产品属性
- 类型
描述
- 型号
IXTT10P50
- 功能描述
MOSFET -10 Amps -500V 0.9 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYX |
20+ |
TO-268 |
210 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS |
22+ |
TO2683 D3Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
Littelfuse/IXYS |
24+ |
TO268 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IXYS |
25+ |
TO-268 |
30000 |
代理全新原装现货,价格优势 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS(艾赛斯) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
IXYS |
24+ |
TO-268 |
8866 |
||||
IXYS/艾赛斯 |
24+ |
CK605 |
9600 |
原装现货,优势供应,支持实单! |
|||
IXYS/艾赛斯 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IXYS |
22+ |
TO-268 |
20000 |
公司只做原装 品质保障 |
IXTT10P50规格书下载地址
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2018-12-28
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