Standard Power MOSFET

Standard Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current ID= 5A@ TC=25℃ • Drain Source Voltage- : VDSS= 1000V(Min) • Static Drain-Source On-Resistance : RDS(on) = 2Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations f

N通道标准高电压MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

Standard Power MOSFET

Standard Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

Standard Power MOSFET

Standard Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

Standard Power MOSFET

Standard Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

POWER MOSFETS IN A TO-3 PACKAGE

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