MegaMOSFET

N-Channel Enhancement Mode Features International standard packages Low RDS (on)HDMOS™ process Rugged polysilicon gate cell structure Low package inductance (

N通道标准高电压MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

isc N-Channel MOSFET Transistor

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N-Channel Enhancement Mode

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包装：卷带（TR） 描述：POWER MOSFET TO-3 分立半导体产品 晶体管 - FET，MOSFET - 单个

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

MegaMOSFET

N-Channel Enhancement Mode Features International standard packages Low RDS (on)HDMOS™ process Rugged polysilicon gate cell structure Low package inductance (

Power MOSFETs

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