位置：首页 > IC中文资料第5898页 > IXTM13N65
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V@TJ max, 12.3A, RDS(ON) = 0.32W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
13A 650V N-channel enhancement mode field effect transistor 文件：685.58 Kbytes Page：5 Pages | YFWDIODE 佑风微电子 | | ||
N-Channel MOSFET 650V, 14A, 0.46(ohm) 文件：835.88 Kbytes Page：6 Pages | MGCHIP | |
IXTM13N65产品属性
- 类型
描述
- 型号
IXTM13N65
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
25+ |
TO-251 |
10 |
原装正品,假一罚十! |
|||
CET/華瑞 |
24+ |
NA/ |
27326 |
原装现货,当天可交货,原型号开票 |
|||
CET |
20+ |
TO-251 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
CET |
21+ |
TO-251 |
100 |
原装现货假一赔十 |
|||
CET |
1822+ |
TO-251 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CET/華瑞 |
2022+ |
TO-251 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
CET/華瑞 |
23+ |
TO-251 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
CET |
23+ |
TO-251 |
10065 |
原装正品,有挂有货,假一赔十 |
|||
VBsemi |
23+ |
TO-251 |
8560 |
受权代理!全新原装现货特价热卖! |
IXTM13N65规格书下载地址
IXTM13N65参数引脚图相关
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2018-12-28
DdatasheetPDF页码索引
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