High Voltage Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International Standard Packages ● Molding Epoxies Weet UL 94 V-0 Flammability Classification ● Fast Intrinsic Diode ● Low Package Inductance Advantages ● Easy to Mount ● Space Savings ● High Power Density Ap

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 1500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·High Voltage Power Supplies ·Capacitor Discharge Applications ·Pulse Circuits

N通道标准高电压MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

High Voltage Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International Standard Packages ● Molding Epoxies Weet UL 94 V-0 Flammability Classification ● Fast Intrinsic Diode ● Low Package Inductance Advantages ● Easy to Mount ● Space Savings ● High Power Density Ap

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International Standard Packages ● Molding Epoxies Weet UL 94 V-0 Flammability Classification ● Fast Intrinsic Diode ● Low Package Inductance Advantages ● Easy to Mount ● Space Savings ● High Power Density Ap

High Voltage Power MOSFET

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