N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Dynamic dv/dt Rating • Avalanche Rated • Fast Intrinsic Rectifier • Low QG • Low RDS(on) • Low Drain-to-Tab Capacitance • Low Package Inductance Advantages • Easy to Mount

N通道标准 Polar™ MOSFET

isc N-Channel MOSFET Transistor

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12 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

Fast Switching

• FEATURES • Drain Current ID= 12A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) • Fast Switching •APPLICATIONS •Switch mode power supply.

Power MOSFETs

FEATURES • Low Figure-of-Merit Ron x Qg • 100 Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC

12A, 500V N-CHANNEL POWER MOSFET

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N-Channel 650 V (D-S) MOSFET

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