GenX3 600V IGBT

High Speed PT IGBTs for 40-100kHz switching Features Optimized for low switching losses Square RBSOA International standard packages

GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

High Speed PT IGBTs for 40 - 100kHz Switching Features ● Optimized for Low Switching Losses ● Square RBSOA ● Anti-Parallel Schottky Diode ● International Standard Packages Advantages ● High Power Density ● Low Gate Drive Requirement Applications ● High Frequency Power Inverters ● UPS ●

GenX3 600V IGBT With Diode

High Speed PT IGBTs for 40-100kHz switching Features ● Optimized for low switching losses ● Square RBSOA ● Anti-parallel ultra fast diode ● International standard packages Advantages ● High power density ● Low gate drive requirement Applications ● High Frequency Power Inverters ● UPS

HiPerFAST IGBT C2- Class High Speed IGBTs

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PT 高频IGBT

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 60A 220W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 60A 220W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT 高频IGBT

PT 高频IGBT

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

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ACTIVE / SYNCHRONOUS RECTIFIER

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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