HiPerFAST IGBT

VCES = 500 V IC(25) = 44 A VCE(sat)typ = 2.1 V tfi(typ) = 55 ns Features • International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD • High frequency IGBT • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on

500V,22A N-Channel MOSFET

General Description The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts canbe ad

500V,22A N-Channel MOSFET

General Description The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanch capabili

Fast Switching

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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