Low VCE(sat) IGBT, High speed IGBT

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封装/外壳：TO-247-3 包装：管件 描述：IGBT 1000V 20A 100W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Low VCE(sat) IGBT with Diode, High speed IGBT with Diode

Features ● International standard package JEDEC TO-247 AD ● IGBT and anti-parallel FRED in one package ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● MOS Gate turn-on - drive simplicity ● Fast Recovery Epitaxial Diode (FRED) - soft

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1000V 20A 100W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

10A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages