型号 功能描述 生产厂家 企业 LOGO 操作
IXGA15N120B

HiPerFAST IGBT

VCES = 1200 V IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Features • International standard packages JEDEC TO-220AB and TO-263AA • Low switching losses, low V(sat) • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers

IXYS

艾赛斯

IXGA15N120B

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IGBT 1200V 30A 150W TO263AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

IXGA15N120B

PT IGBTs

Littelfuse

力特

High ruggedness, temperature stable behavior

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness,

DINTEK

Soft current turn-off waveforms

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior

DINTEK

Soft current turn-off waveforms

General Description Din-Tek IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High system efficiency ·Soft current turn-off waveforms ·E

DINTEK

IGBT

General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件:1.36019 Mbytes Page:9 Pages

FOSHAN

蓝箭电子

IXGA15N120B产品属性

  • 类型

    描述

  • 型号

    IXGA15N120B

  • 功能描述

    IGBT 晶体管 30 Amps 1200V 3.2 Rds

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-10-4 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
23+
21368
原厂授权一级代理,专业海外优势订货,价格优势、品种
NEXPERIA/安世
23+
SOT-23
69820
终端可以免费供样,支持BOM配单!
IXYS
23+
TO-263
63799
##公司主营品牌长期供应100%原装现货可含税提供技术
IXYS
22+
TO263 (IXGA)
9000
原厂渠道,现货配单
IXYS
24+
TO-263
6500
郑重承诺只做原装进口现货
IXYS
24+
TO-263(D2PAK)
8866
IXYS
原厂封装
9800
原装进口公司现货假一赔百
IXYS
23+
TO-263
50000
全新原装正品现货,支持订货
IXYS
23+
TO-263
7000
IXYS/艾赛斯
23+
TO-263
6000
原装正品,支持实单

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