型号 功能描述 生产厂家&企业 LOGO 操作
IXGA15N120B

HiPerFASTIGBT

VCES=1200V IC25=30A VCE(sat)=3.2V tfi(typ)=160ns Features •InternationalstandardpackagesJEDECTO-220ABandTO-263AA •Lowswitchinglosses,lowV(sat) •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DCchoppers

IXYS

IXYS Integrated Circuits Division

IXYS
IXGA15N120B

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IGBT 1200V 30A 150W TO263AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

IXYS Integrated Circuits Division

IXYS

Highruggedness,temperaturestablebehavior

GeneralDescription Din-TekFieldStopTrenchIGBTsofferlowswitchinglosses,high energyefficiencyandshortcircuitruggedness. Itisdesignedforapplicationssuchasmotorcontrol,uninterruptedpower supplies(UPS),generalinverters. FEATURES ·Highspeedswitching ·Highruggedness,

DINTEK

DinTek Semiconductor Co,.Ltd

DINTEK

Softcurrentturn-offwaveforms

GeneralDescription Din-TekFieldStopTrenchIGBTsofferlowswitchinglosses,high energyefficiencyandhighavalancheruggednessforsoftswitching applicationsuchasIH(inductionheating),microwaveoven,etc. FEATURES ·Highspeedswitching ·Highruggedness,temperaturestablebehavior

DINTEK

DinTek Semiconductor Co,.Ltd

DINTEK

Softcurrentturn-offwaveforms

GeneralDescription Din-TekIGBTsofferlowswitchinglosses,highenergyefficiency andhighavalancheruggednessforsoftswitchingapplicationsuchas IH(inductionheating),microwaveoven,etc. FEATURES ·Highspeedswitching ·Highsystemefficiency ·Softcurrentturn-offwaveforms ·E

DINTEK

DinTek Semiconductor Co,.Ltd

DINTEK

IGBT

GeneralDescription EmployingNPTtechnology,Fairchild’sANDseriesofIGBTsprovideslowconductionandswitchinglosses.TheANDseriesofferssolutionsforapplicationssuchasinductionheating(IH),motorcontrol,generalpurposeinvertersanduninterruptiblepowersupplies(UPS). Features

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Insulated-GateBipolarTransistorinaTO-3PPlasticPackage

文件:1.36019 Mbytes Page:9 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

IXGA15N120B产品属性

  • 类型

    描述

  • 型号

    IXGA15N120B

  • 功能描述

    IGBT 晶体管 30 Amps 1200V 3.2 Rds

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2024-5-11 18:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
24+
TO263
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
IXYS
23+
TO-263(D2PAK
8600
全新原装现货
IXYS/艾赛斯
23+
TO-263
6000
原装正品,支持实单
IXYS
21+
TO263 (IXGA)
13880
公司只售原装,支持实单
IXYS/艾赛斯
23+
TO-263(D2PAK)
90000
只做原厂渠道价格优势可提供技术支持
IXYS-艾赛斯
24+25+/26+27+
TO-263-3
6328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
IXYS
22+
TO-263
6500
郑重承诺只做原装进口货
IXYS
1746+
TO263
8862
深圳公司现货!特价支持工厂客户!提供样品!
IXYS
22+
TO263 (IXGA)
9000
原厂渠道,现货配单
IXYS
23+
TO-263
12300
全新原装真实库存含13点增值税票!

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