IGBT

Features • International standard packages JEDEC TO-220AB and TO-263AA • Second generation HDMOS™ process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC chopper

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 1000V 24A 100W TO263AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT 低频IGBT

IGBT

Features • International standard packages JEDEC TO-220AB and TO-263AA • Second generation HDMOS™ process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC chopper

IGBT - Combi Pack

Features • International standard packages JEDEC TO-220AB and TO-263AA • IGBT with antiparallel FRED in one package • Second generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Expitaxial Diode (

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

IGBT - Combi Pack

Features • International standard packages JEDEC TO-220AB and TO-263AA • IGBT with antiparallel FRED in one package • Second generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Expitaxial Diode (

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HiPerRF Power MOSFETs

VDSS = 1000V ID25 = 12A RDS(on) ≤ 1.05Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Rugged polysilicon gate cell structure •

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features • International standard package • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronou

HiPerRF Power MOSFETs

VDSS = 1000V ID25 = 12A RDS(on) ≤ 1.05Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Rugged polysilicon gate cell structure •