型号 功能描述 生产厂家&企业 LOGO 操作
IXFM12N100

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

IXFM12N100

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

IXFM12N100

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

ISC

无锡固电

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

N-Channel Enhancement Mode MOSFET

文件:231.04 Kbytes Page:4 Pages

DACO

N-Channel Enhancement Mode MOSFET

文件:238.98 Kbytes Page:4 Pages

DACO

IXFM12N100产品属性

  • 类型

    描述

  • 型号

    IXFM12N100

  • 功能描述

    MOSFET 12 Amps 1000V 1.05 Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-17 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
XILINX直供
BGA
3647
莱克讯每片来自原厂!价格超越代理!只做进口原装!
IXYS
2318+
TO-03
4862
只做进口原装!假一赔百!自己库存价优!
IXYS/艾赛斯
QQ咨询
TO-03
102
全新原装 研究所指定供货商
IXYS
24+
TO-03
200
进口原装正品优势供应
IXYS/艾赛斯
专业铁帽
1
原装铁帽专营,代理渠道量大可订货
IXYS
24+
TO-3
536
IXYS/艾赛斯
22+
TO-264
25000
只做原装进口现货,专注配单
IXYS
05+
原厂原装
4284
只做全新原装真实现货供应
IXYS/艾赛斯
专业铁帽
TO-3
67500
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