INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2,500 Volt AC/RMS) • Very low internal inductance (≤ 5 nH typ.) • Industry

Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2500 V AC/RMS) • Very low internal inductance (5 nH typical) • Industry standard o

Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2500 V AC/RMS) • Very low internal inductance (5 nH typical) • Industry standard o

Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

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