isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage- : VDSS=550V(Min) ·Static Drain-Source On-Resistance : RDS(on) =88mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

HiPerFET Power MOSFETs Q-Class

Features • Double metal process for low gate resistance • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density

HiPerFET Power MOSFETs Q-Class

Features • Double metal process for low gate resistance • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 550V, 60A, RDS(ON) = 50mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-247 package. RoHS compliant.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 88mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-channel 55V - 8.0m??- 65A - DPAK - IPAK MDmesh??low voltage Power MOSFET

Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packin