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IXFX44N60价格
参考价格：￥75.4249
型号：IXFX44N60 品牌：IXYS 备注：这里有IXFX44N60多少钱，2025年最近7天走势，今日出价，今日竞价，IXFX44N60批发/采购报价，IXFX44N60行情走势销售排行榜，IXFX44N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFX44N60 | HiPerFET Power MOSFETs HiPerFETTM Single MOSFET Die Power MOSFETs Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier | IXYS 艾赛斯 |   | |
IXFX44N60 | HiPerFET Power MOSFETs HiPerFETTM Single MOSFET Die Power MOSFETs Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier | IXYS 艾赛斯 | | |
IXFX44N60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=44A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.13Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv | ISC 无锡固电 | | |
IXFX44N60 | N通道HiPerFET | Littelfuse 力特 | | |
HiPerFET Power MOSFETs Single Die MOSFET HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features •Conforms to SOT-227B outline •Low RDS (on) HDMOSTM process •Rugged polysilicon gate cell structure •Unclamped Inductive Switching (UIS) rated •Low package inductance •Fast in | IXYS 艾赛斯 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.13Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c | ISC 无锡固电 | | ||
HiPerFET Power MOSFETs HiPerFETTM Single MOSFET Die Power MOSFETs Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier | IXYS 艾赛斯 | | ||
HiPerFET Power MOSFETs HiPerFETTM Single MOSFET Die Power MOSFETs Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier | IXYS 艾赛斯 | | ||
HiPerFET Power MOSFETs Single Die MOSFET 文件：532.57 Kbytes Page：2 Pages | IXYS 艾赛斯 | |
IXFX44N60产品属性
- 类型
描述
- 型号
IXFX44N60
- 功能描述
MOSFET 600V 44A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
SOP8 |
9600 |
原装现货,优势供应,支持实单! |
|||
IXYS |
23+ |
TO-220 |
20000 |
全新原装假一赔十 |
|||
IXYS |
25+ |
TO-247 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IXYS |
23+ |
TO-247Max |
8000 |
只做原装现货 |
|||
IXYS |
2447 |
PLUS247(TO-247) |
105000 |
30个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
IXYS/艾赛斯 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
IXYS/艾赛斯 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
IXYS |
25+23+ |
TO-247 |
42654 |
绝对原装正品全新进口深圳现货 |
|||
IXYS |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
17+ |
TO-247 |
60000 |
保证进口原装可开17%增值税发票 |
IXFX44N60芯片相关品牌
IXFX44N60规格书下载地址
IXFX44N60参数引脚图相关
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IXFX44N60数据表相关新闻
IXFN300N10P
进口代理
2022-12-7IXFT60N60X3HV
IXFT60N60X3HV
2022-8-11IXFP22N65X2M
原装正品现货
2022-7-19IXGH60N60C3D1
IXGH60N60C3D1，全新原装当天发货或门市自取0755-82732291.
2019-12-2IXOLAR?高效25％SolarMD模块SM111K04L
IXYS / Littelfuse的SolarMD模块非常适合为许多类型的电池供电或绿色电力产品充电
2019-9-17IXOLAR?高效25％SolarBIT太阳能电池KXOB25-12X1F
IXYS / Littelfuse的SolarBIT非常适合为许多类型的电池供电的电网产品充电
2019-9-17
DdatasheetPDF页码索引
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