isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=38A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.22Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

N通道HiPerFET

• 国际标准包装\n• 双金属工艺带来较低的栅极电阻\n• 雪崩能量和电流额定值\n• 快速本征整流器\n• 较低的封装电感;

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg , low trr Features • Double metal process for low gate resistance • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Avalanche energy and current rated • Fast

HiPerFET Power MOSFETs Q2-Class

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