HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epox

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epox

HiPerFET Power MOSFETs Q-Class

文件：580.16 Kbytes Page：4 Pages

Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)

SMPS MOSFET Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Rugg

Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)

SMPS MOSFET Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Rugg

HiPerFET Power MOSFETs ISOPLUS247

文件：92.65 Kbytes Page：4 Pages

HEXFET짰 Power MOSFET

文件：44.55 Kbytes Page：3 Pages

HEXFET Power MOSFET

文件：178.89 Kbytes Page：8 Pages