型号 功能描述 生产厂家 企业 LOGO 操作
IXFX16N90

HiPerFET Power MOSFETs

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast i

IXYS

艾赛斯

IXFX16N90

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

HiPerFET Power MOSFETs

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast i

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • IXYS advanced low Qg process • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS(on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • Easy

IXYS

艾赛斯

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • IXYS advanced low Qg process • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS(on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • Easy

IXYS

艾赛斯

IXFX16N90产品属性

  • 类型

    描述

  • 型号

    IXFX16N90

  • 制造商

    IXYS

  • 制造商全称

    IXYS Corporation

  • 功能描述

    HiPerFET Power MOSFETs

更新时间:2026-3-2 17:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
24+
SOT-5440&NBS
4500
只做原装正品现货 欢迎来电查询15919825718
IXYS(艾赛斯)
25+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
22+
TO2473
9000
原厂渠道,现货配单
IXYS
23+
TO-247
8000
只做原装现货
IXYS
23+
TO-247
7000
IXYS
25+
PLUS247
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IXYS/艾赛斯
24+
TO-247
60000
IXYS/LITTELFUSE
2028
TO-247
15800
全新原装正品现货直销
IXYS/艾赛斯
23+
TO
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择

IXFX16N90数据表相关新闻