位置：首页 > IC中文资料第8723页 > IXFV20N80P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFV20N80P | PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe | IXYS IXYS Integrated Circuits Division |  |   |
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.52Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E | IXYS IXYS Integrated Circuits Division | | | |
PolarHVHiPerFETPowerMOSFET 文件：139.47 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | |
IXFV20N80P产品属性
- 类型
描述
- 型号
IXFV20N80P
- 功能描述
MOSFET 20 Amps 800V 0.52 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
PLUS220 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
21+ |
TO2203 Short Tab |
13880 |
公司只售原装,支持实单 |
|||
IXYS |
20+ |
TO-220-3 |
90000 |
全新原装正品/库存充足 |
|||
IXYS |
23+ |
PLUS220SMD |
10328 |
全新原装 |
|||
IXYS/艾赛斯 |
23+ |
PLUS220 |
6000 |
原装正品，支持实单 |
|||
IXYS原装 |
22+23+ |
PLUS220 |
23656 |
绝对原装正品全新进口深圳现货 |
|||
IXYS/艾赛斯 |
23+ |
PLUS220 |
50000 |
全新原装正品现货,支持订货 |
|||
IXYS |
22+ |
TO2203 Short Tab |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
23+ |
SMD |
67041 |
原装正品实单可谈 库存现货 |
IXFV20N80P芯片相关品牌
IXFV20N80P规格书下载地址
IXFV20N80P参数引脚图相关
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IXFV20N80P数据表相关新闻
IXFN300N10P
进口代理
2022-12-7IXFT60N60X3HV
IXFT60N60X3HV
2022-8-11IXFP22N65X2M
原装正品现货
2022-7-19IXGH60N60C3D1
IXGH60N60C3D1，全新原装当天发货或门市自取0755-82732291.
2019-12-2IXOLAR?高效25％SolarMD模块SM111K04L
IXYS/Littelfuse的SolarMD模块非常适合为许多类型的电池供电或绿色电力产品充电
2019-9-17IXOLAR?高效25％SolarBIT太阳能电池KXOB25-12X1F
IXYS/Littelfuse的SolarBIT非常适合为许多类型的电池供电的电网产品充电
2019-9-17
DdatasheetPDF页码索引
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