型号 功能描述 生产厂家&企业 LOGO 操作
IXFV18N90P

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Sw

IXYS

IXYS Integrated Circuits Division

IXYS

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Sw

IXYS

IXYS Integrated Circuits Division

IXYS

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Sw

IXYS

IXYS Integrated Circuits Division

IXYS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=660mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Sw

IXYS

IXYS Integrated Circuits Division

IXYS

PolarPowerMOSFETHiPerFET

文件:121.57 Kbytes Page:4 Pages

IXYS

IXYS Integrated Circuits Division

IXYS

IXFV18N90P产品属性

  • 类型

    描述

  • 型号

    IXFV18N90P

  • 功能描述

    MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-14 18:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
20+
TO-220-3
90000
全新原装正品/库存充足
IXYS
21+
TO2203 Short Tab
13880
公司只售原装,支持实单
IXYS/艾赛斯
23+
PLUS220
6000
原装正品,支持实单
IXYS-艾赛斯
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
IXYS
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
IXYS
22+
TO2203 Short Tab
9000
原厂渠道,现货配单
IXYS
23+
PLUSTO-220
12300
全新原装真实库存含13点增值税票!
IXYS/艾赛斯
22+
PLUS220
25000
只做原装进口现货,专注配单
IXYS/艾赛斯
23+
PLUS220
10000
公司只做原装正品

IXFV18N90P芯片相关品牌

  • BANNER
  • CHEMI-CON
  • CTMICRO
  • JUXING
  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

IXFV18N90P数据表相关新闻