TrenchMV Power MOSFET HiperFET

TrenchMV™ Power MOSFET HiperFET™ N-Channel Enhancement Mode Avalanche Rated Fast intrisic diode Features • Ultra-low On Resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • 175 °C Operating Temperature • Fast intrinsic diode

N通道沟槽栅 Gen1 MOSFET

isc N-Channel MOSFET Transistor

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TrenchT2 HiperFET Power MOSFET

TrenchT2™ HiperFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier Features • International Standard Packages • 175°C Operating Temperature • High Current Handling Capability • Fast Intrinsic Rectifier • Dynamic dV/dt Rated • Low RDS(on) Advantages • Ea

isc N-Channel MOSFET Transistor

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N通道沟槽栅MOSFET

N-Channel Enhancement Mode Power MOSFET

Description The GT130N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT130N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT130N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The GT130N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

Standard Size Toggle Switch

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