isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- VDSS= 600V(Min) ·Static Drain-Source On-Resistance - RDS(on) = 0.74Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Polar HiPerFET Power MOSFET

Polar3 ™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • S

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) =740mΩ(Max)@VGS= 10V APPLICATIONS · Switching · DC-DC Converters

N通道HiPerFET

Power MOSFET

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

N-Channel 6 50V (D-S) Power MOSFET

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N-Channel 650V (D-S) Power MOSFET

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10A 600V N-channel Enhancement Mode Power MOSFET

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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