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IXFN27N80价格
参考价格：￥137.8366
型号：IXFN27N80 品牌：IXYS 备注：这里有IXFN27N80多少钱，2026年最近7天走势，今日出价，今日竞价，IXFN27N80批发/采购报价，IXFN27N80行情走势销售排行榜，IXFN27N80报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFN27N80 | HiPerFETTM Power MOSFETs HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilic | IXYS 艾赛斯 |   | |
IXFN27N80 | HiPerFET Power MOSFETs HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilic | IXYS 艾赛斯 | | |
IXFN27N80 | N通道HiPerFET | LITTELFUSE 力特 | | |
IXFN27N80 | HiPerFET Power MOSFETs 文件：157.32 Kbytes Page：4 Pages | IXYS 艾赛斯 | | |
HiPerFET Power MOSFETs Q-Class Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard package • Epoxy meet UL94V-0, flammability classification • miniBLOC with Aluminium nitride isolation • IXYS advanced low Qg process • Rugged polysilicon gate cell structure | IXYS 艾赛斯 | | ||
N通道HiPerFET | LITTELFUSE 力特 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | ||
HiPerFET Power MOSFETs HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilic | IXYS 艾赛斯 | | ||
HiPerFETTM Power MOSFETs HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilic | IXYS 艾赛斯 | | ||
HiPerFET Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inducti | IXYS 艾赛斯 | | ||
HiPerFET Power MOSFETs 文件：157.32 Kbytes Page：4 Pages | IXYS 艾赛斯 | |
IXFN27N80产品属性
- 类型
描述
- 型号
IXFN27N80
- 功能描述
MOSFET 800V 27A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
模块 |
320 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
IXYS/艾赛斯 |
MODULE |
23+ |
6000 |
专业配单原装正品假一罚十 |
|||
IXYS/艾赛斯 |
25+ |
MODULE |
12500 |
全新原装现货,假一赔十 |
|||
IXYS |
19+/20+ |
SOT-227B |
1000 |
主打产品价格优惠.全新原装正品 |
|||
IXYS |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
|||
IXYS |
2023+ |
1MOS27A8 |
65000 |
现货原装正品公司优 |
|||
IXYS/艾赛斯 |
22+ |
MODULE |
12245 |
现货,原厂原装假一罚十! |
|||
IXYS |
26+ |
模块 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
IXYS/艾赛斯 |
2023+ |
MODULE |
103 |
主打螺丝模块系列 |
IXFN27N80规格书下载地址
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DdatasheetPDF页码索引
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