isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 48A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 48A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.135Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mou

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 48A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 140mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · PFC Circuits · AC and DC Motor Drives

N通道HiPerFET

N通道HiPerFET MOSFET

Advance Technical Information

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N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 140mΩ(Max)@VGS= 10V APPLICATIONS · Battery Chargers · DC Choppers · Power Factor Correction (PFC) · DC-DC Converters · High Speed Power Switching Application

PolarHV HiPerFET Power MOSFET

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