isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

N-Channel Enhancement Mode Avalanche Rated, High dv/dt

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

HiPerFETTM Power MOSFETs

Features • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) • Molding epoxies meet UL94V-0 flammability classification Advantages • Easy to mount • Space savings • High power density

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

N-CHANNEL 80V (D-S) MOSFET

DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology

isc N-Channel MOSFET Transistor

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N-CHANNEL MOSFET in a TO-220 Plastic Package

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N-Channel MOSFET uses advanced SGT technology

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N-CHANNEL MOSFET in a TO-220 Plastic Package

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