HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N通道HiPerFET MOSFET

7.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

Drain Current ID= 7A@ TC=25C

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7A 800V N-channel Enhancement Mode Power MOSFET

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7A 800V N-channel Enhancement Mode Power MOSFET

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7A 800V N-channel Enhancement Mode Power MOSFET

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