HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

PolarHT??HiPerFET Power MOSFET

Features ● International standard packages ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High power density

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V APPLICATIONS · Switching · Converters

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 300V(Min) · Static Drain-Source On-Resistance -RDS(on) = 8.3mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · PFC Circuits · AC and DC Motor Drives

N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options

TrenchHV Power MOSFET HiperFET

文件：163.33 Kbytes Page：5 Pages

TrenchT2 HiperFET Power MOSFET

文件：186.8 Kbytes Page：6 Pages

N通道沟槽栅 Gen2 MOSFET

N通道沟槽栅MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

文件：187.57 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：381.37 Kbytes Page：2 Pages

N-Channel Enhancement Mode Avalanche Rated

文件：259.06 Kbytes Page：6 Pages

包装：卷带（TR） 描述：MOSFET N-CH 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel Enhancement Mode Avalanche Rated

文件：303.15 Kbytes Page：6 Pages

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

MINIATURE FUSES - 5x15 mm

文件：48.73 Kbytes Page：2 Pages

Limiting continuous current 130A at 85째C

文件：563.76 Kbytes Page：3 Pages

INTERCONNECT BATTERY HOLDERS

文件：355.08 Kbytes Page：1 Pages

Easy Identification and Tracing with 10-color Cable

文件：578.7 Kbytes Page：1 Pages