HiPerFETTM Power MOSFETs Q Class

Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ●

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

10A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages