HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •Fastintrins

Buck&BoostConfigurationsforPFC&MotorControlCircuits

Buck&BoostConfigurationsforPFC&MotorControlCircuits Features •PopularBuck&Boostcircuittopologies •ConformstoSOT-227Boutline •Isolationvoltage3000V~ •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Lowdrain-to-casecapacit

Buck&BoostConfigurationsforPFC&MotorControlCircuits

Buck&BoostConfigurationsforPFC&MotorControlCircuits Features •PopularBuck&Boostcircuittopologies •ConformstoSOT-227Boutline •Isolationvoltage3000V~ •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Lowdrain-to-casecapacit

44A,500V,0.12Ohm,N-ChannelSMPSPowerMOSFET

Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=44A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested DESCRIPTION motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140mΩ trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

iscN-ChannelMOSFETTransistor

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