型号 功能描述 生产厂家&企业 LOGO 操作

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •Fastintrins

IXYS

IXYS Corporation

IXYS

Buck&BoostConfigurationsforPFC&MotorControlCircuits

Buck&BoostConfigurationsforPFC&MotorControlCircuits Features •PopularBuck&Boostcircuittopologies •ConformstoSOT-227Boutline •Isolationvoltage3000V~ •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Lowdrain-to-casecapacit

IXYS

IXYS Corporation

IXYS

Buck&BoostConfigurationsforPFC&MotorControlCircuits

Buck&BoostConfigurationsforPFC&MotorControlCircuits Features •PopularBuck&Boostcircuittopologies •ConformstoSOT-227Boutline •Isolationvoltage3000V~ •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Lowdrain-to-casecapacit

IXYS

IXYS Corporation

IXYS

44A,500V,0.12Ohm,N-ChannelSMPSPowerMOSFET

Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=44A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested DESCRIPTION motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140mΩ trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXYS

iscN-ChannelMOSFETTransistor

文件:275.98 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXFE44N50产品属性

  • 类型

    描述

  • 型号

    IXFE44N50

  • 功能描述

    MOSFET 44 Amps 500V 0.12 Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-10-31 23:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
24+
SOT-227B
30000
晶体管-分立半导体产品-原装正品
IXYS
22+
NA
4500
全新原装品牌专营
IXYS
24+
12
原装现货,可开13%税票
IXYS
2023+
MODULE
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
IXYS
2022
SOT-227B
58
原厂原装正品,价格超越代理
IXYS
23+
MOSFETN-CH500V39ASOT-227
1690
专业代理销售半导体模块,能提供更多数量
IXYS
18+
SOT227
2050
公司大量全新原装 正品 随时可以发货
IXYS
22+
SOT2274 miniBLOC
9000
原厂渠道,现货配单
IXYS/艾赛斯
18+
SOT227
12500
全新原装正品,本司专业配单,大单小单都配
IXYS
23+
SMD
67134
原装正品实单可谈 库存现货

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