Preliminary Technical Information

VDSS = 500V ID25 = 20A RDS(on) ≤ 300m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features  Fast Intrinsic Rectifier  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Moun

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N通道HiPerFET

Power MOSFET

文件：361.65 Kbytes Page：7 Pages

Power MOSFET

文件：361.65 Kbytes Page：7 Pages

Preliminary Technical Information

VDSS = 500V ID25 = 20A RDS(on) ≤ 300m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features  Fast Intrinsic Rectifier  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Moun

Power MOSFET

文件：361.65 Kbytes Page：7 Pages