Polar HiPerFET Power MOSFET

Polar3 ™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • S

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 740mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N通道HiPerFET

Power MOSFET

文件：252.41 Kbytes Page：5 Pages

Power MOSFET

文件：252.41 Kbytes Page：5 Pages

包装：管件 描述：MOSFET N-CH 600V 10A D2-PAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：330.13 Kbytes Page：8 Pages

N-Channel 6 50V (D-S) Power MOSFET

文件：2.17857 Mbytes Page：10 Pages

N-Channel 650V (D-S) Power MOSFET

文件：2.33382 Mbytes Page：11 Pages

10A 600V N-channel Enhancement Mode Power MOSFET

文件：976.2 Kbytes Page：11 Pages