10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.intersil.

N-Channel Power MOSFET

Features • Max RDS(on) = 103 m at VGS = 10 V, ID = 3.3 A • Max RDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A • HBM ESD Protection Level > 3 kV Typical (Note 1) • 100 UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC−DC Conversion General Description This N

Wide-Bandwidth Oscilloscope Mainframe and Modules

文件：3.88371 Mbytes Page：35 Pages

Wide-Bandwidth Oscilloscope Mainframe and Modules

文件：3.20317 Mbytes Page：37 Pages

Wide-Bandwidth Oscilloscope Mainframe and Modules

文件：3.88371 Mbytes Page：35 Pages

N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 m廓

文件：347.31 Kbytes Page：7 Pages