P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

MONOLITHIC DUAL PNP TRANSISTORS

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Linear Systems replaces discontinued Intersil IT131

文件：289.87 Kbytes Page：1 Pages

MONOLITHIC DUAL NPN TRANSISTOR

Bipolar Transistors

MONOLITHIC DUAL NPN TRANSISTOR

文件：275.14 Kbytes Page：1 Pages

MONOLITHIC DUAL NPN TRANSISTOR

文件：275.1 Kbytes Page：1 Pages

MONOLITHIC DUAL NPN TRANSISTOR

文件：271.03 Kbytes Page：1 Pages

MONOLITHIC DUAL NPN TRANSISTOR

文件：289.46 Kbytes Page：1 Pages

MONOLITHIC DUAL NPN TRANSISTOR

文件：289.87 Kbytes Page：1 Pages

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us