电流隔离八通道高侧智能功率固态继电器

The ISO8200B is a galvanic isolated 8-channel driver featuring a very low supply current. It contains 2 independent galvanic isolated voltage domains (Vcc for the power stage and Vdd for the digital stage). Additional embedded functions are: loss of GND protection, undervoltage shutdown with hystere • Parallel input interface \n• Direct and synchronous control mode \n• High common mode transient immunity \n• Output current: 0.7 A per channel \n• Short-circuit protection \n• Channel overtemperature protection \n• Thermal independence of separate channels \n• Common output disable pin \n• Case ov;

电流隔离八通道高侧智能功率固态继电器

• Vdemag = VCC - 45 V（每通道） \n• RDS(on) = 0.12 W（每通道） \n• IOUT = 0.7 A（每通道） \n• VCC = 45 V \n• 并行输入接口 \n• 直接和同步控制模式 \n• 较高的共模瞬态抗扰度 \n• 短路保护 \n• 通道过温保护 \n• 独立通道的热独立性 \n• 通用输出禁用引脚 \n• 外壳过温保护 \n• GNDCC和VCC断开保护 \n• 带自动重启和迟滞的欠压关断• 过压保护（VCC箝位） \n• 超低供电电流 \n• 常见故障漏极开路输出 \n• 兼容5 V和3.3 V TTL/CMOS的I/O \n• 感应负载;

Galvanic isolated octal high-side smart power solid state-relay

Description The ISO8200BQ is a galvanic isolated 8-channel driver featuring a very low supply current. It contains 2 independent galvanic isolated voltage domains (Vcc for the power stage and Vdd for the digital stage). Additional embedded functions are: loss of GND protection, undervoltage

Galvanic isolated octal high-side smart power solid state-relay

Description The ISO8200BQ is a galvanic isolated 8-channel driver featuring a very low supply current. It contains 2 independent galvanic isolated voltage domains (Vcc for the power stage and Vdd for the digital stage). Additional embedded functions are: loss of GND protection, undervoltage

Industrial digital output expansion board based on ISO8200BQ for STM32 Nucleo

Features • Based on the ISO8200BQ octal high-side switch, which features: – Operating range 10.5 to 36 V – Low power dissipation (RON(MAX) = 240 mΩ) – Process side operating current: up to 0.7 A per channel – Embedded 2.5k VRMS galvanic isolation – Direct (jitter

带SPI接口的电流隔离八通道高侧智能功率固态继电器

Industrial digital output expansion board based on ISO8200AQ for STM32 Nucleo

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Galvanic isolated octal high-side smart power solid state relay

文件：1.24834 Mbytes Page：33 Pages

封装/外壳：32-TQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER 1:1 32TFQFPN 集成电路（IC） 配电开关，负载驱动器

封装/外壳：32-TQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER 1:1 32TFQFPN 集成电路（IC） 配电开关，负载驱动器

Ultra fast high-voltage soft-recovery controlled avalanche rectifiers

DESCRIPTION Plastic package, using glass passivation and a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package should be used in an insulating medium such as resin, oil or SF6 gas.

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including input and output matchin