Dual LDO with Low Noise, Low IQ, and High PSRR

Dual LDO with Low Noise, Low IQ, and High PSRR ISL9014A is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two

Dual LDO with Low Noise, Low IQ, and High PSRR

ISL9014A is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. A reference bypass pin allows an external capacitor for adjusting a noi

Dual LDO with Low Noise, Low IQ, and High PSRR

Dual LDO with Low Noise, Low IQ, and High PSRR ISL9014A is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two

封装/外壳：10-VFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG LINEAR 2.8V/3V 10DFN 集成电路（IC） 线性 + 开关稳压器

封装/外壳：10-VFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG LINEAR 2.8V/3V 10DFN 集成电路（IC） 稳压器 - 线性

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be

Fairchild QFET for Synchronous Rectification

Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS(on), gate charge, and switching speed characteristics. The superior features of these QFETs are very useful for increasing the efficiency of low output voltage power supplies, making it specially

NPN EPITAXIAL SILICON TRANSISTOR

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors NPN silicon