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IS93C46-3	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46-3G	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46-3GI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46-3GR	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46-3GRI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46-3P	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46-3PI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46A	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A	1,024/2,048/4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION\nThe IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256\nwords of 1 • Industry-standard Microwire Interface\n— Non-volatile data storage\n— Low voltage operation: Vcc = 2.5V to 5.5V\n— Full TTL compatible inputs and outputs\n— Auto increment for efficient data dump\n• User Configured Memory Organization\n— By 16-bit or by 8-bit\n• Hardware and software write protect;	ISSI 矽成半导体	ISSI
IS93C46A-3G	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION\nThe IS93C46A is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or • Industry-standard Microwire Interface\n— Non-volatile data storage\n— Low voltage operation: Vcc = 2.5V to 5.5V\n— Full TTL compatible inputs and outputs\n— Auto increment for efficient data dump\n• User Configured Memory Organization\n— By 16-bit or by 8-bit\n• Hardware and software write protect;	ISSI 矽成半导体	ISSI
IS93C46A-3G	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GL	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GLI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GR	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GRA	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GRI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GRL	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GRLI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3P	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3PA	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3PI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3PL	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3PLI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3Z	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3ZI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3ZL	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3ZLI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46B	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3G	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3GI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3GR	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3GRA	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3GRI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3P	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3PA	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3PI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3Z	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3ZI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46D	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-2DLI	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-2GRI	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-2GRLI	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-2PI	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-2PLI	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-3GRLA3	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-3PLA3	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46B	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM	ISSI 矽成半导体	ISSI
M93C46	16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide Description The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a Serial Data input (D) and Serial Data output (Q) using the MICROWIRE bus protocol. Features ● Industry standard MICROWIRE bus ● Single supply vo	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M93C46DS	16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide Description The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a Serial Data input (D) and Serial Data output (Q) using the MICROWIRE bus protocol. Features ● Industry standard MICROWIRE bus ● Single supply vo	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M93C46DW	16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide Description The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a Serial Data input (D) and Serial Data output (Q) using the MICROWIRE bus protocol. Features ● Industry standard MICROWIRE bus ● Single supply vo	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M93C46-R	16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide Description The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a Serial Data input (D) and Serial Data output (Q) using the MICROWIRE bus protocol. Features ● Industry standard MICROWIRE bus ● Single supply vo	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M93C46-W	16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide Description The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a Serial Data input (D) and Serial Data output (Q) using the MICROWIRE bus protocol. Features ● Industry standard MICROWIRE bus ● Single supply vo	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

IS93C46产品属性

类型
描述
型号
IS93C46
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

IS93C46供应商更多...

更新时间：2026-5-21 8:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市晨豪科技有限公司	IS93C46-3P	ISSI	23+	DIP-8	89630	当天发货全新原装现货	询价
深圳市华来深电子有限公司	IS93C46-3P	ISSI	23+	DIP8	8560	受权代理!全新原装现货特价热卖!	询价
深圳市芯亿发电子科技有限公司	IS900	ISOCOM	26+	DIP	20000	公司只有正品,实单来谈	询价
深圳市纳艾斯科技有限公司	IS93C46-3P	ISSI	24+	DIP8	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市威雅利发展有限公司	IS93C46-3P	ISSI	99+	DIP8	2335	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳诚思涵科技有限公司	IS900	ISOCOM	26+	DIP	99680	只做原装,欢迎来电资询	询价
深圳市福田区绿盛电子商行	IS93C46-3PX-5804C	ISSI	2015+	TQFP	19889	一级代理原装现货,特价热卖!	询价
深圳市宏捷佳电子科技有限公司	IS93C46-3P	ISSI	2023+	DIP-8	53500	正品,原装现货	询价
深圳市科恒伟业电子有限公司	IS902	N/A	2450+	QFN	6540	只做原厂原装正品现货或订货!终端工厂可以申请样品!	询价
贸泽芯城（深圳）电子科技有限公司	IS900	ISOCOM	23+	DIP6	19966	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价

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IS916EN
IS916EN 深圳市拓亿芯电子有限公司，本公司具备一般纳税人，可开16点增值税票，货源渠道保证原厂原装正品IC，诚信为本，薄利多销。
2019-3-6
IS9-1715ARH-8-抗辐射互补开关FET驱动器
抗辐射互补开关FET驱动器辐射硬化的IS -1715ARH是一种高速，高当前互补功率FET设计中使用的驱动程序同步整流电路。软开关转换两个输出波形可通过设置管理独立的可编程延迟。延迟引脚可以通过配置零电压传感，让精确的开关控制。的IS -1715ARH有一个输入，这是PWM和TTL兼容，并能运行频率高达1MHz。该辅助输出开关立即在上升沿输入，但之前等待响应延迟为T2的下降沿。一个逻辑低使能引脚（ENBL）的地方俱进低有效输出模式，并根据电压的锁定（UVLO）功能功能设定在9伏（最大）。与Intersil的人工介质隔离抗辐射硅栅（体操）过程中，这些设备是免疫单粒子闭锁（SEL
2013-3-1

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