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IS93C46-3	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46-3G	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46-3GI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46-3GR	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46-3GRI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46-3P	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46-3PI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t	ISSI 矽成半导体	ISSI
IS93C46A	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3G	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GL	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GLI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GR	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GRA	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GRI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GRL	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3GRLI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3P	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3PA	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3PI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3PL	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3PLI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3Z	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3ZI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3ZL	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46A-3ZLI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word	ISSI 矽成半导体	ISSI
IS93C46B	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3G	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3GI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3GR	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3GRA	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3GRI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3P	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3PA	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3PI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3Z	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46B-3ZI	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA	ISSI 矽成半导体	ISSI
IS93C46D	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-2DLI	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-2GRI	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-2GRLI	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-2PI	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-2PLI	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-3GRLA3	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46D-3PLA3	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u	ISSI 矽成半导体	ISSI
IS93C46A	1,024/2,048/4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM	ISSI 矽成半导体	ISSI
IS93C46B	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM	ISSI 矽成半导体	ISSI
IS93C46D	1-KBIT SERIAL ELECTRICALLY ERASABLE PROM	ISSI 矽成半导体	ISSI
93C46	16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM FEATURES SUMMARY n Industry Standard MICROWIRE Bus n Single Supply Voltage: – 4.5V to 5.5V for M93Cx6 – 2.5V to 5.5V for M93Cx6-W – 1.8V to 5.5V for M93Cx6-R n Dual Organization: by Word (x16) or Byte (x8) n Programming Instructions that work on: Byte, Word or Entire Memory n Self-timed P	SYC	SYC
93C46	1K 5.0V Microwire Serial EEPROM Description: The Microchip Technology Inc. 93XX46A/B/C devices are 1Kbit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93AA46C, 93LC46C or 93C46C are dependent upon external logic levels driving the ORG pin to set word size. For dedicated 8-bit commu	Microchip 微芯科技	Microchip
93C46	256 Bit/1K 5.0V CMOS Serial EEPROM	Microchip 微芯科技	Microchip
93C46A	1K Microwire Compatible Serial EEPROM Description: The Microchip Technology Inc. 93XX46A/B/C devices are 1Kbit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93AA46C, 93LC46C or 93C46C are dependent upon external logic levels driving the ORG pin to set word size. For dedicated 8-bit commu	Microchip 微芯科技	Microchip
93C46A	1K Microwire Compatible Serial EEPROM 文件：438.59 Kbytes Page：28 Pages	Microchip 微芯科技	Microchip

IS93C46产品属性

类型
描述
型号
IS93C46
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

IS93C46供应商更多...

更新时间：2025-12-11 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	IS93C46-3GRI	ISSI	24+	NA/	4867	原装现货,当天可交货,原型号开票	询价
深圳市科芯源微电子有限公司	IS93C46-3P	ISSI/芯成	25+	原厂原封可拆样	54687	百分百原装现货实单必成	询价
深圳市华睿芯科技有限公司	IS93C46-3G	ISSI	24+	SOP8	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市振宏微科技有限公司	IS93C46-3G	INTEGRATEDS	23+	原厂封装	9888	专做原装正品,假一罚百!	询价
深圳市豪迈兴电子有限公司	IS93C46-3G	ISSI	24+	SOP-8	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市福田区绿盛电子商行	IS93C46-3PX-5804C	ISSI	2015+	TQFP	19889	一级代理原装现货,特价热卖!	询价
深圳市赛美科科技有限公司	IS93C46-3GR	ISSI		ROHS	56520	一级代理原装正品假一罚十价格优势长期供货	询价
标准国际(香港)有限公司	IS93C46-3GRI	IS93C46-3GRI	25+	300	300		询价
贸泽芯城（深圳）电子科技有限公司	IS93C46-3G	ISSI	23+	SOP-8	4850	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市昌和盛利电子有限公司	IS93C46-3G	ISSI	NEW	SMD	9526	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价

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