位置：首页 > IC中文资料第6719页 > IS93C46A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS93C46A | 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 |   | |
IS93C46A | 1,024/2,048/4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM | ISSI 矽成半导体 | | |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM | ISSI 矽成半导体 | | ||
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM FEATURES SUMMARY n Industry Standard MICROWIRE Bus n Single Supply Voltage: – 4.5V to 5.5V for M93Cx6 – 2.5V to 5.5V for M93Cx6-W – 1.8V to 5.5V for M93Cx6-R n Dual Organization: by Word (x16) or Byte (x8) n Programming Instructions that work on: Byte, Word or Entire Memory n Self-timed P | SYC | | ||
1K 5.0V Microwire Serial EEPROM Description: The Microchip Technology Inc. 93XX46A/B/C devices are 1Kbit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93AA46C, 93LC46C or 93C46C are dependent upon external logic levels driving the ORG pin to set word size. For dedicated 8-bit commu | Microchip 微芯科技 | | ||
256 Bit/1K 5.0V CMOS Serial EEPROM
| Microchip 微芯科技 | | ||
1K Microwire Compatible Serial EEPROM Description: The Microchip Technology Inc. 93XX46A/B/C devices are 1Kbit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93AA46C, 93LC46C or 93C46C are dependent upon external logic levels driving the ORG pin to set word size. For dedicated 8-bit commu | Microchip 微芯科技 | | ||
1K Microwire Compatible Serial EEPROM 文件：438.59 Kbytes Page：28 Pages | Microchip 微芯科技 | |
IS93C46A产品属性
- 类型
描述
- 型号
IS93C46A
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
SOIC |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
ISSI |
NEW |
SOP8 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
ISSI |
24+ |
DIP |
3000 |
全新原装现货 优势库存 |
|||
ISSI |
23+ |
NA |
767 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
ISSI |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
|||
ISSI |
2025+ |
SOP8 |
3635 |
全新原厂原装产品、公司现货销售 |
|||
ISSI |
25+ |
SOP-8 |
4000 |
原厂原装,价格优势 |
|||
ISSI |
22+ |
SOP8 |
12245 |
现货,原厂原装假一罚十! |
|||
ISSI |
24+ |
NA/ |
1500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ISSI |
24+ |
SOP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
IS93C46A规格书下载地址
IS93C46A参数引脚图相关
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2019-3-6IS9-1715ARH-8-抗辐射互补开关FET驱动器
抗辐射互补开关FET驱动器 辐射硬化的IS -1715ARH是一种高速，高当前互补功率FET设计中使用的驱动程序同步整流电路。软开关转换两个输出波形可通过设置管理独立的可编程延迟。延迟引脚可以通过配置零电压传感，让精确的开关控制。的IS -1715ARH有一个输入，这是PWM和TTL兼容，并能运行频率高达1MHz。该辅助输出开关立即在上升沿输入，但之前等待响应延迟为T2的下降沿。一个逻辑低使能引脚（ENBL）的地方俱进低有效输出模式，并根据电压的锁定（UVLO）功能功能设定在9伏（最大）。与Intersil的人工介质隔离抗辐射硅栅（体操）过程中，这些设备是免疫单粒子闭锁（SEL
2013-3-1
DdatasheetPDF页码索引
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