位置：首页 > IC中文资料第6719页 > IS93C46A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS93C46A | 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 |   | |
IS93C46A | 1,024/2,048/4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION\nThe IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256\nwords of 1 • Industry-standard Microwire Interface\n— Non-volatile data storage\n— Low voltage operation: Vcc = 2.5V to 5.5V\n— Full TTL compatible inputs and outputs\n— Auto increment for efficient data dump\n• User Configured Memory Organization\n— By 16-bit or by 8-bit\n• Hardware and software write protect; | ISSI 矽成半导体 | | |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION\nThe IS93C46A is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or • Industry-standard Microwire Interface\n— Non-volatile data storage\n— Low voltage operation: Vcc = 2.5V to 5.5V\n— Full TTL compatible inputs and outputs\n— Auto increment for efficient data dump\n• User Configured Memory Organization\n— By 16-bit or by 8-bit\n• Hardware and software write protect; | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word | ISSI 矽成半导体 | | ||
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide Description The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a Serial Data input (D) and Serial Data output (Q) using the MICROWIRE bus protocol. Features ● Industry standard MICROWIRE bus ● Single supply vo | STMICROELECTRONICS 意法半导体 | | ||
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide Description The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a Serial Data input (D) and Serial Data output (Q) using the MICROWIRE bus protocol. Features ● Industry standard MICROWIRE bus ● Single supply vo | STMICROELECTRONICS 意法半导体 | | ||
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide Description The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a Serial Data input (D) and Serial Data output (Q) using the MICROWIRE bus protocol. Features ● Industry standard MICROWIRE bus ● Single supply vo | STMICROELECTRONICS 意法半导体 | | ||
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide Description The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a Serial Data input (D) and Serial Data output (Q) using the MICROWIRE bus protocol. Features ● Industry standard MICROWIRE bus ● Single supply vo | STMICROELECTRONICS 意法半导体 | | ||
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide Description The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a Serial Data input (D) and Serial Data output (Q) using the MICROWIRE bus protocol. Features ● Industry standard MICROWIRE bus ● Single supply vo | STMICROELECTRONICS 意法半导体 | |
IS93C46A产品属性
- 类型
描述
- 型号
IS93C46A
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
2025+ |
SOP8 |
3635 |
全新原厂原装产品、公司现货销售 |
|||
ISSI |
25+ |
SOP8 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ISSI |
20+ |
SOP-8 |
2960 |
诚信交易大量库存现货 |
|||
ISSI |
2023+ |
SOP8 |
3000 |
进口原装现货 |
|||
ISSI/芯成 |
25+ |
TSSOP8 |
90000 |
全新原装现货 |
|||
ISSI |
24+ |
SOIC |
9600 |
原装现货,优势供应,支持实单! |
|||
ISSI/芯成 |
24+ |
SOP8 |
54000 |
郑重承诺只做原装进口现货 |
|||
INTEGRATED SILICON SOLUTION |
2023+ |
SMD |
2708 |
安罗世纪电子只做原装正品货 |
|||
ISSI |
25+ |
DIP |
26200 |
原装现货,诚信经营! |
|||
ISSI |
23+ |
SOP-8 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
IS93C46A规格书下载地址
IS93C46A参数引脚图相关
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- IS80C52
- IS80C51
- IS80C32
- IS80C31
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IS93C46A数据表相关新闻
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2019-3-6IS9-1715ARH-8-抗辐射互补开关FET驱动器
抗辐射互补开关FET驱动器 辐射硬化的IS -1715ARH是一种高速，高当前互补功率FET设计中使用的驱动程序同步整流电路。软开关转换两个输出波形可通过设置管理独立的可编程延迟。延迟引脚可以通过配置零电压传感，让精确的开关控制。的IS -1715ARH有一个输入，这是PWM和TTL兼容，并能运行频率高达1MHz。该辅助输出开关立即在上升沿输入，但之前等待响应延迟为T2的下降沿。一个逻辑低使能引脚（ENBL）的地方俱进低有效输出模式，并根据电压的锁定（UVLO）功能功能设定在9伏（最大）。与Intersil的人工介质隔离抗辐射硅栅（体操）过程中，这些设备是免疫单粒子闭锁（SEL
2013-3-1
DdatasheetPDF页码索引
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