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512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

TTL compatible interface levels

文件:1.35008 Mbytes Page:18 Pages

ISSI

北京矽成

TTL compatible interface levels

文件:1.35008 Mbytes Page:18 Pages

ISSI

北京矽成

Very Low Power/Voltage CMOS SRAM

文件:280.7 Kbytes Page:9 Pages

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更新时间:2025-8-12 8:44:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
2025+
TSSOP
3768
全新原厂原装产品、公司现货销售
ISSI
21+
BGA
10000
原装现货假一罚十
ISSI
22+
BGA
8000
原装正品支持实单
ISSI
24+
BGA
9800
一级代理/全新原装现货/长期供应!
ISSI
2025+
TSOP44
32560
原装优势绝对有货
ISSI
16+
BGA
2500
进口原装现货/价格优势!
ISSI(美国芯成)
24+
N/A
10000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ISSI
24+
TSOP44
66500
只做原装进口现货
ISSI
23+
TSOP
89630
当天发货全新原装现货
ISSI, Integrated Silicon Solut
21+
60-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营

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