型号 功能描述 生产厂家 企业 LOGO 操作
IS62WV51216HBLL

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three

ISSI

矽成半导体

IS62WV51216HBLL

PowerSaver™ Lower Power Asynchronous SRAM

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

TTL compatible interface levels

文件:1.35008 Mbytes Page:18 Pages

ISSI

矽成半导体

TTL compatible interface levels

文件:1.35008 Mbytes Page:18 Pages

ISSI

矽成半导体

更新时间:2025-12-9 19:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
17+
BGA
12
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI(美国芯成)
24+
5514
只做原装现货假一罚十!价格最低!只卖原装现货
ISSI
23+
TSOP44
18000
正规渠道,只有原装!
ISSI
24+
TSOP44
8000
新到现货,只做全新原装正品
ISSI美国芯成
2450+
9850
只做原厂原装正品现货或订货假一赔十!
ISSI
24+
TSOP44
5000
十年沉淀唯有原装
ISSI
24+
TSOP44
8000
原厂原装,价格优势,欢迎洽谈!
ISSI
2022+
6600
只做原装,假一罚十,长期供货。
ISSI
24+
TSOP44
13500
只做原装 有挂有货 假一赔十
ISSI
24+
TSOP44
5000
全新原装正品,现货销售

IS62WV51216HBLL数据表相关新闻