位置：首页 > IC中文资料 > IS62WV25616BLL-55BTLI-TR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and | ISSI 矽成半导体 |   | ||
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and | ISSI 矽成半导体 | | ||
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and | ISSI 矽成半导体 | | ||
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and | ISSI 矽成半导体 | | ||
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and | ISSI 矽成半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI/芯成 |
25+ |
TSOP44 |
12496 |
ISSI原装正品IS62WV25616BLL-55TLI即刻询购立享优惠#长期有货 |
|||
ISSI |
25+ |
TSOP44 |
82500 |
全新原装现货库存 |
|||
ISSI |
25+ |
TSOP |
25000 |
代理渠道假一罚十 |
|||
ISSI(美国芯成) |
24+ |
TSOP-44 |
17048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ISSI |
24+ |
TSOP44 |
6800 |
||||
ISSI |
23+ |
TSOP |
98900 |
原厂原装正品现货!! |
|||
ISSI |
24+ |
TSOP44 |
40000 |
全新原装现货特价销售,欢迎来电查询 |
|||
ISSI |
2008 |
TSOP |
5321 |
厂家指定一级分销全新原装现货价 |
|||
ISSI |
24+ |
TSOP-44 |
6800 |
100%原装进口现货,欢迎来电咨询 |
|||
ISSI |
24+ |
TSOP44 |
10000 |
专营ISSI进口原装正品现货假一赔十 |
IS62WV25616BLL-55BTLI-TR芯片相关品牌
IS62WV25616BLL-55BTLI-TR规格书下载地址
IS62WV25616BLL-55BTLI-TR参数引脚图相关
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IS62WV25616BLL-55BTLI-TR数据表相关新闻
IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
2020-1-1IS62WV5128BLL-55HLI
IS62WV5128BLL-55HLI，全新原装当天发货或门市自取0755-82732291.
2019-3-18IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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