2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSIs highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSIs highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSIs highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSIs highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSIs highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low

封装/外壳：48-TFBGA 包装：托盘 描述：IC SRAM 16MBIT PAR 48MINIBGA 集成电路（IC） 存储器

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 16MBIT PAR 44TSOP II 集成电路（IC） 存储器

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSIs highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low

TTL compatible interface levels

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