IS61WV25616BLL-10TL价格

参考价格:¥20.1294

型号:IS61WV25616BLL-10TL 品牌:ISSI 备注:这里有IS61WV25616BLL-10TL多少钱,2026年最近7天走势,今日出价,今日竞价,IS61WV25616BLL-10TL批发/采购报价,IS61WV25616BLL-10TL行情走势销售排行榜,IS61WV25616BLL-10TL报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS61WV25616BLL-10TL

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Sta

ISSI

矽成半导体

IS61WV25616BLL-10TL

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:212.36 Kbytes Page:21 Pages

ISSI

矽成半导体

IS61WV25616BLL-10TL

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Sta

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:212.36 Kbytes Page:21 Pages

ISSI

矽成半导体

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Sta

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Sta

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:212.36 Kbytes Page:21 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:212.36 Kbytes Page:21 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:212.36 Kbytes Page:21 Pages

ISSI

矽成半导体

IS61WV25616BLL-10TL产品属性

  • 类型

    描述

  • 型号

    IS61WV25616BLL-10TL

  • 功能描述

    静态随机存取存储器 4Mb 256Kx16 10ns Async 静态随机存取存储器 3.3v

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2026-2-5 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
22+
TSSOP
12245
现货,原厂原装假一罚十!
ISSI
2406+
TSOP
11260
诚信经营!进口原装!量大价优!
ISSI
25+
TSOP44
3000
全新原装、诚信经营、公司现货销售
ISSI
19+
TSOP
12000
ISSI
20+
SSOP
2960
诚信交易大量库存现货
ISSI
21+
TSOP44
6000
全新原装 鄙视假货
ISSI
26+
DIP
86720
全新原装正品价格最实惠 假一赔百
ISSI
25+
TSSOP44
10500
全新原装现货,假一赔十
ISSI
2026+
TQFP-44
18800
进口原装价格品质决定一切!样品可出,省内可代收!
ISSI
23+
标准
5000
原装正品,假一罚十

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