位置：首页 > IC中文资料第20页 > IS61WV12816DBLL-10BLI-TR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61WV12816DBLL-10BLI-TR | 封装/外壳：48-TFBGA 包装：卷带（TR） 描述：IC SRAM 2MBIT PARALLEL 48MINIBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC |   |
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 矽成半导体 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 矽成半导体 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 矽成半导体 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 矽成半导体 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 矽成半导体 | |
IS61WV12816DBLL-10BLI-TR产品属性
- 类型
描述
- 型号
IS61WV12816DBLL-10BLI-TR
- 功能描述
静态随机存取存储器 2M(128Kx16) 10ns Async 静态随机存取存储器 3.3v
- RoHS
否
- 制造商
Cypress Semiconductor
- 存储容量
16 Mbit
- 组织
1 M x 16
- 访问时间
55 ns
- 电源电压-最大
3.6 V
- 电源电压-最小
2.2 V
- 最大工作电流
22 uA
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 安装风格
SMD/SMT
- 封装/箱体
TSOP-48
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
23+ |
48-迷你型BGA(6x8) |
9550 |
专业分销产品!原装正品!价格优势! |
|||
ISSI |
25+ |
5000 |
原厂原装,价格优势 |
||||
ISSI |
25+ |
35 |
公司优势库存 热卖中! |
||||
ISSI |
25+23+ |
TSOP |
28061 |
绝对原装正品全新进口深圳现货 |
|||
ISSI |
17+ |
TSOP |
6200 |
100%原装正品现货 |
|||
ISSI |
2023+ |
TSSOP |
6895 |
原厂全新正品旗舰店优势现货 |
|||
ISSI |
23+ |
标准 |
5000 |
原装正品,假一罚十 |
|||
ISSI Integrated Silicon Soluti |
22+ |
44TSOP II |
9000 |
原厂渠道,现货配单 |
|||
ISSI(美国芯成) |
2021+ |
TSOP(II)-44 |
499 |
||||
ISSI |
25+ |
TSOP |
3000 |
全新原装、诚信经营、公司现货销售 |
IS61WV12816DBLL-10BLI-TR芯片相关品牌
IS61WV12816DBLL-10BLI-TR规格书下载地址
IS61WV12816DBLL-10BLI-TR参数引脚图相关
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IS61WV12816DBLL-10BLI-TR数据表相关新闻
IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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