位置：首页 > IC中文资料 > IS61WV12816DBLL-10BI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61WV12816DBLL-10BI | 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 矽成半导体 |   | |
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 矽成半导体 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 矽成半导体 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 矽成半导体 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 矽成半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
SMD |
15600 |
静态随机存取存储器2M(128Kx16)10nsAsync静态随机存取 |
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ISSI |
2223+ |
BGA48 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
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ISSI, |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
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ISSI |
21+ |
BGA48 |
1975 |
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ISSI |
2409+ |
n/a |
100 |
原装现货真实库存!量大特价! |
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ISSI |
25+ |
BGA-48 |
16000 |
原装优势绝对有货 |
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ISSI |
23+ |
标准 |
5000 |
原装正品,假一罚十 |
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ISSI, Integrated Silicon Solut |
24+ |
48-迷你型BGA(6x8) |
56200 |
一级代理/放心采购 |
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ISSI |
1645+ |
? |
8450 |
只做原装进口,假一罚十 |
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ISSI |
2025+ |
TFBGA48 |
3615 |
全新原厂原装产品、公司现货销售 |
IS61WV12816DBLL-10BI芯片相关品牌
IS61WV12816DBLL-10BI规格书下载地址
IS61WV12816DBLL-10BI参数引脚图相关
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IS61WV12816DBLL-10BI数据表相关新闻
IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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